Amorphous Silicon Thin Film Transistors Prepared by Plasma Enhanced Chemical Vapor Deposition

The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition

Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH3 diffusion model, which is in conflict with first-principles calculation results an...

Surface roughening during plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates

Surface roughening during plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates" Physical Review B. The morphology of a series of thin films of hydrogenated amorphous silicon ͑a-Si:H͒ grown by plasma-enhanced chemical-vapor deposition ͑PECVD͒ is studied using scanning tunneling microscopy. The substrates were atomically flat, oxide-free, single-cr...

Nanocrystalline silicon quantum dots prepared by VHF plasma-enhanced chemical vapor deposition

Nanocrystalline silicon is a promising material for future ultralarge scale integrated circuits and display devices. Various methods have been demonstrated for the fabrication of nanocrystalline silicon with size less than 10nm. We have prepared nanocrystalline silicon ultrafine particles by very-high-frequency plasma decomposition of silane and hydrogen. Nanoparticles formed in the plasma cell...

Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications

PECVD technology was used for deposition of a-SiC:H films at different temperature from SiH4 and CH4 gas mixture. A P-type silicon wafer with resistivity 2-7 cm and (100) orientation was used as the substrate for the growth of SiC films. Irradiation of samples by fast neutrons with fluence 1.4x10 14 cm -2 was used. Raman band feature intensity decreasing after neutron irradiation. The measured ...